IPT017N12NM6 120V MOSFET

Infineon

Description

IPT017N12NM6 MOSFET OptiMOSTM 6 Power-Transistor, 120 V .

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Datasheet Specifications

Part number: IPT017N12NM6
Manufacturer: Infineon ↗
File Size: 957.47 KB
Datasheet: IPT017N12NM6-Infineon.pdf
Description: 120V MOSFET

Features

* N-channel, normal level
* Very low on-resistance RDS(on)
* Excellent gate charge x RDS(on) product (FOM)
* Very low reverse recovery charge (Qrr)
* High avalanche energy rating
* 175°C operating temperature
* Optimized for high frequency swit

Applications

* Table 1 Key Performance Parameters Parameter Value Unit VDS 120 V RDS(on),max 1.7 mΩ ID 331 A Qoss 266 nC QG 113 nC Qrr (1000 A/µs) 301 nC Type / Ordering Code IPT017N12NM6 Package PG-HSOF-8 TOLL Tab 12345 678 Drain Tab Gate Pin 1 Source Pin 2-8 Marking 017N12N6 Rel

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IPT017N12NM6 120V MOSFET Infineon

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