IPT020N10N3 Datasheet - Infineon

IPT020N10N3 - MOSFET

IPT020N10N3 Features

* N-channel, normal level

* Excellent gate charge x RDS(on) product (FOM)

* Extremely low on-resistance RDS(on)

* High current capability

* 175 °C operating temperature

* Pb-free lead plating; RoHS compliant

* Qualified according to JEDEC 1) f

Datasheet Details

IPT020N10N3

1.06 MB

Mosfet.

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