Datasheet Details
- Part number
- IPT020N10N3
- Manufacturer
- Infineon ↗
- File Size
- 1.06 MB
- Datasheet
- IPT020N10N3-Infineon.pdf
- Description
- MOSFET
IPT020N10N3 Description
MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM3 Power-Transistor, 100 V IPT020N10N3 Data Sheet Rev.2.0 Final Power Mana.
Features.
N-channel, normal level.
Excellent gate charge x RDS(on) product (FOM).
Extremely low on-resistance RDS(on).
IPT020N10N3 Features
* N-channel, normal level
* Excellent gate charge x RDS(on) product (FOM)
* Extremely low on-resistance RDS(on)
* High current capability
* 175 °C operating temperature
* Pb-free lead plating; RoHS compliant
* Qualified according to JEDEC 1) f
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