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IPT020N10N3 - MOSFET

IPT020N10N3 Description

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM3 Power-Transistor, 100 V IPT020N10N3 Data Sheet Rev.2.0 Final Power Mana.
Features. N-channel, normal level. Excellent gate charge x RDS(on) product (FOM). Extremely low on-resistance RDS(on).

IPT020N10N3 Features

* N-channel, normal level
* Excellent gate charge x RDS(on) product (FOM)
* Extremely low on-resistance RDS(on)
* High current capability
* 175 °C operating temperature
* Pb-free lead plating; RoHS compliant
* Qualified according to JEDEC 1) f

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