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IPT026N12NM6 - MOSFET

IPT026N12NM6 Description

Public IPT026N12NM6 Final datasheet MOSFET OptiMOS™ 6 Power‑Transistor, 120 V .
1 Maxi.

IPT026N12NM6 Features

* N‑channel, normal level
* Very low on‑resistance RDS(on)
* Excellent gate charge x RDS(on) product (FOM)
* Very low reverse recovery charge (Qrr)
* High avalanche energy rating
* 175°C operating temperature
* Optimized for high frequency swit

IPT026N12NM6 Applications

* Table 1 Key Performance Parameters Parameter Value Unit VDS 120 V RDS(on),max 2.6 mΩ ID 224 A Qoss 166 nC QG (0V10V) 70 nC Qrr (1000A/μs) 245 nC Type/Ordering Code IPT026N12NM6 Package PG‑HSOF‑8 TOLL tab 12 34 5 678 87654 321 Drain Tab Gate Pin 1 Source Pin 2-8 Marking

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