IPT026N10N5 Datasheet - Infineon

IPT026N10N5, MOSFET

IPT026N10N5 MOSFET OptiMOSTM 5 Power-Transistor, 100 V .

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Datasheet Details

Part number:

IPT026N10N5

Manufacturer:

Infineon ↗

File Size:

0.99 MB

Description:

MOSFET

Features

* Ideal for high frequency switching and sync. rec.
* Excellent gate charge x RDS(on) product (FOM)
* Very low on-resistance RDS(on)
* N-channel, normal level
* 100% avalanche tested
* Pb-free plating; RoHS compliant
* Halogen-free according t

Applications

* Table 1 Key Performance Parameters Parameter Value Unit VDS 100 V RDS(on),max 2.6 mΩ ID 202 A Qoss 123 nC QG(0V. .10V) 96 nC HSOF Tab 12345 678 Drain Tab Gate Pin 1 Source Pin 2-8 Type / Ordering Code IPT026N10N5 Package PG-HSOF-8 Marking 026N10N5 Related Links - Final

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