Datasheet Details
- Part number
- IPT026N10N5
- Manufacturer
- Infineon ↗
- File Size
- 0.99 MB
- Datasheet
- IPT026N10N5-Infineon.pdf
- Description
- MOSFET
IPT026N10N5 Description
IPT026N10N5 MOSFET OptiMOSTM 5 Power-Transistor, 100 V .
IPT026N10N5 Features
* Ideal for high frequency switching and sync. rec.
* Excellent gate charge x RDS(on) product (FOM)
* Very low on-resistance RDS(on)
* N-channel, normal level
* 100% avalanche tested
* Pb-free plating; RoHS compliant
* Halogen-free according t
IPT026N10N5 Applications
* Table 1 Key Performance Parameters
Parameter
Value
Unit
VDS
100
V
RDS(on),max
2.6
mΩ
ID
202
A
Qoss
123
nC
QG(0V. .10V)
96
nC
HSOF Tab
12345 678
Drain Tab
Gate Pin 1
Source Pin 2-8
Type / Ordering Code IPT026N10N5
Package PG-HSOF-8
Marking 026N10N5
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