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ISC012N04LM6 40V MOSFET

ISC012N04LM6 Description

ISC012N04LM6 MOSFET OptiMOSTM 6 Power-Transistor, 40 V .

ISC012N04LM6 Features

* N-channel
* Very low on-resistance RDS(on)
* Superior thermal resistance
* 100% avalanche tested
* Pb-free lead plating; RoHS compliant
* Halogen-free according to IEC61249-2-21

ISC012N04LM6 Applications

* Table 1 Key Performance Parameters Parameter Value Unit VDS 40 V RDS(on),max 1.2 mΩ ID 238 A Qoss 56 nC QG 25 nC TDSON-8 FL (enlarged source interconnection) 8 7 65 1 2 3 4 4 3 2 1 5 67 8 Drain Pin 5-8 Gate
* 1 Pin 4 Source
* 1: Internal body diode Pin 1-3 Type

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