ISZ080N10NM6 MOSFET

Infineon

Description

ISZ080N10NM6 MOSFET OptiMOSTM 6 Power-Transistor, 100 V .

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Datasheet Specifications

Part number: ISZ080N10NM6
Manufacturer: Infineon ↗
File Size: 1.35 MB
Datasheet: ISZ080N10NM6-Infineon.pdf
Description: MOSFET

Features

* N-channel, normal level
* Very low on-resistance RDS(on)
* Excellent gate charge x RDS(on) product (FOM)
* Very low reverse recovery charge (Qrr)
* High avalanche energy rating
* 175°C operating temperature
* Optimized for high frequency swit

Applications

* Table 1 Key Performance Parameters Parameter Value Unit VDS 100 V RDS(on),max 8.04 mΩ ID 75 A Qoss 35 nC QG(0V10V) 19 nC Qrr (100A/µs) 31 nC PG-TSDSON-8 FL 8 765 567 8 1 2 34 43 2 1 Drain Pin 5-8 Gate
* 1 Pin 4 Source
* 1: Internal body diode Pin 1-3 Type /

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ISZ080N10NM6 MOSFET Infineon

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