ISZ230N10NM6 Datasheet, Mosfet, Infineon

ISZ230N10NM6 Features

• Mosfet
• N-channel, normal level
• Very low on-resistance RDS(on)
• Excellent gate charge x RDS(on) product (FOM)
• Very low reverse recovery charge (Qrr)

PDF File Details

Part number:

ISZ230N10NM6

Manufacturer:

Infineon ↗

File Size:

1.35MB

Download:

📄 Datasheet

Description:

Mosfet. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

ISZ230N10NM6 Application

• Applications Table 1 Key Performance Parameters Parameter Value Unit VDS 100 V RDS(on),max 23 mΩ ID 31 A Qoss 14 nC QG(0V10V)

TAGS

ISZ230N10NM6

Infineon

📁 Related Datasheet

ISZ-2510 - single axis MEMS gyroscope (InvenSense)
InvenSense Inc. 1745 Technology Drive, San Jose, CA 95110 U.S.A. Tel: +1 (408) 988-7339 Fax: +1 (408) 988-8104 Website: .invensense. Document N.

ISZ-500 - Single-Axis Z-Gyro (InvenSense)
InvenSense Inc. 1197 Borregas Ave, Sunnyvale, CA 94089 U.S.A. Tel: +1 (408) 988-7339 Fax: +1 (408) 988-8104 Website: .invensense. PS-ISZ-0500B-.

ISZ-655 - Single-Axis Z-Gyro (InvenSense)
InvenSense Inc. 1197 Borregas Ave, Sunnyvale, CA 94089 U.S.A. Tel: +1 (408) 988-7339 Fax: +1 (408) 988-8104 Website: .invensense. PS-ISZ-0655B-.

ISZ019N03L5S - MOSFET (Infineon)
ISZ019N03L5S MOSFET OptiMOSTM Power-MOSFET, 30 V Features • Optimized for high performance Buck converter (Server,VGA) • Very Low FOMQOSS for High Fr.

ISZ053N08NM6 - MOSFET (Infineon)
ISZ053N08NM6 MOSFET OptiMOSTM 6 Power-Transistor, 80 V Features • N-channel, normal level • Very low on-resistance RDS(on) • Excellent gate charge x .

ISZ0702NLS - MOSFET (Infineon)
ISZ0702NLS MOSFET OptiMOSTM5 Power-Transistor, 60 V Features • Ideal for high-frequency switching • Optimized for charger • 100% avalanche tested • S.

ISZ080N10NM6 - MOSFET (Infineon)
ISZ080N10NM6 MOSFET OptiMOSTM 6 Power-Transistor, 100 V Features • N-channel, normal level • Very low on-resistance RDS(on) • Excellent gate charge x.

ISZ106N12LM6 - MOSFET (Infineon)
ISZ106N12LM6 MOSFET OptiMOSTM 6 Power-Transistor, 120 V Features • N-channel, logic level • Very low on-resistance RDS(on) • Excellent gate charge x .

ISZ113N10NM5LF2 - MOSFET (Infineon)
ISZ113N10NM5LF2 MOSFET OptiMOSTM 5 Linear FET 2, 100 V Features • Ideal for soft start in Power-over-Ethernet (PoE) application • Very low on-resista.

ISZ15EP15LM - MOSFET (Infineon)
ISZ15EP15LM MOSFET OptiMOSTM Power-Transistor, -150 V Features • P-channel • Very low on-resistance RDS(on) @ VGS=4.5 V • 100% avalanche tested • Log.