ISZ230N10NM6 MOSFET

Infineon

Description

ISZ230N10NM6 MOSFET OptiMOSTM 6 Power-Transistor, 100 V .

📥 Download Datasheet

ISZ230N10NM6 Datasheet Preview — Preview of ISZ230N10NM6 PDF

Datasheet Specifications

Part number: ISZ230N10NM6
Manufacturer: Infineon ↗
File Size: 1.35 MB
Datasheet: ISZ230N10NM6-Infineon.pdf
Description: MOSFET

Features

* N-channel, normal level
* Very low on-resistance RDS(on)
* Excellent gate charge x RDS(on) product (FOM)
* Very low reverse recovery charge (Qrr)
* High avalanche energy rating
* 175°C operating temperature
* Optimized for high frequency swit

Applications

* Table 1 Key Performance Parameters Parameter Value Unit VDS 100 V RDS(on),max 23 mΩ ID 31 A Qoss 14 nC QG(0V10V) 7.4 nC Qrr (100A/µs) 23 nC PG-TSDSON-8 FL 8 765 567 8 1 2 34 43 2 1 Drain Pin 5-8 Gate
* 1 Pin 4 Source
* 1: Internal body diode Pin 1-3 Type /

ISZ230N10NM6 Distributors

📁 Related Datasheet

ISZ-2510 ISZ-500 ISZ-655

📌 All Tags

ISZ230N10NM6 MOSFET Infineon

Infineon ISZ230N10NM6-like datasheet