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ISZ330N12LM6 Datasheet - Infineon

ISZ330N12LM6, MOSFET

ISZ330N12LM6 MOSFET OptiMOSTM 6 Power-Transistor, 120 V .
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ISZ330N12LM6-Infineon.pdf

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Datasheet Details

Part number:

ISZ330N12LM6

Manufacturer:

Infineon ↗

File Size:

1.33 MB

Description:

MOSFET

Features

* N-channel, logic level
* Very low on-resistance RDS(on)
* Excellent gate charge x RDS(on) product (FOM)
* Very low reverse recovery charge (Qrr)
* High avalanche energy rating
* 175°C operating temperature
* Optimized for high frequency switc

Applications

* Table 1 Key Performance Parameters Parameter Value Unit VDS 120 V RDS(on),max 33 mΩ ID 24 A Qoss 13 nC QG (0V4.5V) 4.1 nC Qrr (1000A/µs) 45 nC S3O8 8 765 567 8 1 2 34 43 2 1 Drain Pin 5-8 Gate
* 1 Pin 4 Source
* 1: Internal body diode Pin 1-3 Type / Orderin

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