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BSC076N06NS3G Power-Transistor

BSC076N06NS3G Description

Type OptiMOSTM3 Power-Transistor .

BSC076N06NS3G Features

* Ideal for high frequency switching and sync. rec.
* Optimized technology for DC/DC converters
* Excellent gate charge x R DS(on) product (FOM)
* Superior thermal resistance
* N-channel, normal level
* 100% avalanche tested
* Pb-free plating;

BSC076N06NS3G Applications

* Halogen-free according to IEC61249-2-21 Type BSC076N06NS3 G BSC076N06NS3 G Product Summary VDS RDS(on),max ID 60 V 7.6 mW 50 A Package PG-TDSON-8 Marking 076N06NS Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Value Unit Continuous drai

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Power-Transistor Infineon Technologies
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