IPP045N10N3G MOSFET

Infineon Technologies

IPP045N10N3G Description

IPP045N10N3 G MOSFET OptiMOSª3 Power-Transistor, 100 V .

IPP045N10N3G Features

* N-channel, normal level
* Excellent gate charge x RDS(on) product (FOM)
* Very low on-resistance RDS(on)
* 175 °C operating temperature
* Pb-free lead plating; RoHS compliant

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Datasheet Details

Part number: IPP045N10N3G
Manufacturer: Infineon ↗ Technologies
File Size: 1.62 MB
Datasheet: IPP045N10N3G-InfineonTechnologies.pdf
Description: MOSFET

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MOSFET Infineon Technologies

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