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BFP620F - Low profile high gain silicon NPN RF bipolar transistor

BFP620F Description

BFP620F Low profile high gain silicon NPN RF bipolar transistor Product .
The BFP620F is a RF bipolar transistor based on SiGe:C technology that is part of Infineon’s established sixth generation transistor family.

BFP620F Applications

* according to the relevant tests of JEDEC JESD47, JESD22, and J-STD-020. Qualified for industrial applications according to the relevant tests of AEC-Q 101. Potential applications
* Low noise amplifiers (LNAs) in SDARS receivers
* LNAs for wireless communications
* LNAs for I

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Low profile high gain silicon NPN bipolar transistor Infineon Technologies AG
Infineon Technologies AG BFP620F-like datasheet