* High Efficiency and Linear Gain Operations
* Integrated ESD Protection
* Internally Matched for Ease of Use
* Excellent thermal stability, low HCI drift
* Large Positive
ITCH22120B2E Datasheet (882.72 KB)
ITCH22120B2E
Innogration
882.72 KB
High power rf ldmos fet.
Innogration (Suzhou) Co., Ltd.
Document Number: ITCH22120B2 Preliminary Datasheet V1.0
2110MHz-2170MHz, 120W, 28V High Power RF LDMOS FETs
Descript.
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