ITCH22120B2E, ITCH22120B2 Datasheet - Innogration

ITCH22120B2E High Power RF LDMOS FET

The ITCH22120B2 is a 120-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 2000 to 2200 MHz. It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats. ITCH22120B2 *Typ.

ITCH22120B2E Features

* High Efficiency and Linear Gain Operations

* Integrated ESD Protection

* Internally Matched for Ease of Use

* Excellent thermal stability, low HCI drift

* Large Positive

ITCH22120B2-Innogration.pdf

ITCH22120B2E Datasheet Preview — This datasheet PDF includes multiple part numbers: ITCH22120B2E, ITCH22120B2. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

ITCH22120B2E, ITCH22120B2

Manufacturer:

Innogration

File Size:

882.72 KB

Description:

High power rf ldmos fet.

Note:

This datasheet PDF includes multiple part numbers: ITCH22120B2E, ITCH22120B2.
Please refer to the document for exact specifications by model.

ITCH22120B2E Distributor

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ITCH22120B2E ITCH22120B2 High Power LDMOS FET Innogration