ITCH22161B2 Datasheet - Innogration

High Power RF LDMOS FET

ITCH22161B2 Features

* High Efficiency and Linear Gain Operations

* Integrated ESD Protection

* Internally Matched for Ease of Use

* Excellent thermal stability, low HCI drift

* Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation

* Pb-free, RoHS-compliant Table

ITCH22161B2 General Description

The ITCH22161B2 is a 160-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 2000 to 2200 MHz. It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats. ITCH22161B2 *Typ.

ITCH22161B2 Datasheet (877.19 KB)

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Datasheet Details

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ITCH22161B2

Manufacturer:

Innogration

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877.19 KB

Description:

High power rf ldmos fet.
Innogration (Suzhou) Co., Ltd. Document Number: ITCH22161B2 Preliminary Datasheet V1.0 2110MHz-2170MHz, 160W, 28V High Power RF LDMOS FETs Descript.

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ITCH22161B2 High Power LDMOS FET Innogration

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ITCH22161B2 Features

ITCH22161B2 General Description

Datasheet Details

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