ITCH22161B2E Datasheet, Fet, Innogration

✔ ITCH22161B2E Features

High Efficiency and Linear Gain Operations
Integrated ESD Protection
Internally Matched for Ease of Use
Excellent thermal stability, low HCI drift
Large Positi

✔ ITCH22161B2E Application

with frequencies from 2000 to 2200 MHz. It Can be used in Class AB/B and Class C for all typical cellular ba

PDF File Details

Innogration manufacturer logo

Part number:

ITCH22161B2E

Manufacturer:

Innogration

File Size:

877.19 KB

Download:

📄 Datasheet

Description:

High power rf ldmos fet. The ITCH22161B2 is a 160-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applica

📥 Download PDF (877.19 KB)

📁 Related Datasheet

ITCH22161B2 - High Power RF LDMOS FET (Innogration)

ITCH22160B4 - High Power RF LDMOS FET (Innogration)

ITCH22160B4E - High Power RF LDMOS FET (Innogration)

ITCH22120B2 - High Power RF LDMOS FET (Innogration)

ITCH22120B2E - High Power RF LDMOS FET (Innogration)

ITCH22180B2 - High Power RF LDMOS FET (Innogration)

ITCH22180B2E - High Power RF LDMOS FET (Innogration)

ITCH22210B2 - High Power RF LDMOS FET (Innogration)

TAGS

ITCH22161B2E High Power LDMOS FET Innogration