Datasheet Details
Part number:
ITCH22160B4E, ITCH22160B4
Manufacturer:
Innogration
File Size:
928.63 KB
Description:
High power rf ldmos fet.
Note:
This datasheet PDF includes multiple part numbers: ITCH22160B4E, ITCH22160B4.
Please refer to the document for exact specifications by model.
ITCH22160B4E, ITCH22160B4, High Power RF LDMOS FET
The ITCH22160B4 is a 160-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 2000 to 2200 MHz.
It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats.
ITCH22160B4 *Typ
ITCH22160B4E Features
* High Efficiency and Linear Gain Operations
* Integrated ESD Protection
* Internally Matched for Ease of Use
* Excellent thermal stability, low HCI drift
* Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation
* Pb-free, RoHS-compliant Table
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