ITCH22180B2E Datasheet - Innogration

High Power RF LDMOS FET

ITCH22180B2E Features

* High Efficiency and Linear Gain Operations

* Integrated ESD Protection

* Internally Matched for Ease of Use

* Excellent thermal stability, low HCI drift

* Large Positive and Negativ

ITCH22180B2E General Description

The ITCH22180B2 is a 180-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 2000 to 2200 MHz. It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats. ITCH22180B2 .

ITCH22180B2E Datasheet (294.16 KB)

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Datasheet Details

Part number:

ITCH22180B2E

Manufacturer:

Innogration

File Size:

294.16 KB

Description:

High power rf ldmos fet.
Innogration (Suzhou) Co., Ltd. Document Number: ITCH22180B2 Preliminary Datasheet V1.0 2110MHz-2170MHz, 180W, 28V High Power RF LDMOS FETs Descript.

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ITCH22180B2E High Power LDMOS FET Innogration

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ITCH22180B2E Features

ITCH22180B2E General Description

Datasheet Details

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