ITCH22180B2E Datasheet - Innogration

ITCH22180B2E High Power RF LDMOS FET

The ITCH22180B2 is a 180-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 2000 to 2200 MHz. It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats. ITCH22180B2 .

ITCH22180B2E Features

* High Efficiency and Linear Gain Operations

* Integrated ESD Protection

* Internally Matched for Ease of Use

* Excellent thermal stability, low HCI drift

* Large Positive and Negativ

ITCH22180B2E Datasheet (294.16 KB)