Datasheet Details
- Part number
- MX0160VPX
- Manufacturer
- Innogration
- File Size
- 544.56 KB
- Datasheet
- MX0160VPX-Innogration.pdf
- Description
- High Power RF LDMOS FET
MX0160VPX Description
MX0160VPX LDMOS TRANSISTOR Document Number: MX0160VPX Preliminary Datasheet V1.0 550W, 50V High Power RF LDMOS FETs .
The MX0160VPX is a 550-watt capable, high performance, unmatched LDMOS FET, designed for wide-band commercial and industrial applications with frequen.
MX0160VPX Features
* High Efficiency and Linear Gain Operations
* Integrated ESD Protection
* Excellent thermal stability, low HCI drift
* Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation
MX0160VPX Applications
* with frequencies HF to 0.2 GHz. It is the thermally enhancement of its peer MK0160VPX(S)
MX0160VPX
* Typical performance(on 1.6-30MHz wideband test board with device soldered) VDS=50V,IDQ=1500mA, Signal:2-Tone space 650Hz CW,
Freq(MHz) PAVG(W) Gain(dB) η(%) IMD3(dBc)
1.6
150 24.2 38
-35
5
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