IS49NLS96400A - Separate I/O RLDRAM 2 Memory

Integrated Silicon Solution

IS49NLS96400A Datasheet Preview — Preview of IS49NLS96400A PDF

Datasheet Details

Part number	IS49NLS96400A
Manufacturer	Integrated Silicon Solution
File Size	787.56 KB
Description	Separate I/O RLDRAM 2 Memory
Datasheet	IS49NLS96400A-IntegratedSiliconSolution.pdf

IS49NLS96400A Product details

Description

1.1 576Mb (64Mx9) Separate I/O BGA Ball-out (Top View) 1 2 3 4 5678 A VREF VSS VEXT VSS B VDD DNU3 DNU3 VSSQ C VTT DNU3 DNU3 VDDQ D A221 DNU3 DNU3 VSSQ E A21 DNU3 DNU3 VDDQ F A5 DNU3 DNU3 VSSQ G A8 A6 A7 VDD H BA2 A9 VSS VSS J NF2 NF2 VDD VDD K DK DK# VDD VDD L REF# CS# VSS VSS M WE# A16 A17 VDD N A18 DNU3 DNU3 VSSQ P A15 DNU3 DNU3 VDDQ R VSS DNU3 DNU3 VSSQ T VTT DNU3 DNU3 VDDQ U VDD DNU3 DNU3 VSSQ V VREF ZQ VEXT VSS

Features

533MHz DDR operation (1.067 Gb/s/pin data rate).
38.4Gb/s peak bandwidth (x18 at 533 MHz clock frequency).
Reduced cycle time (15ns at 533MHz).
32ms refresh (16K refresh for each bank; 128K refresh command must be issued in total each 32ms).
8 internal banks.
Non-multiplexed addresses (address multiplexing option available).
SRAM-type interface.
Programmable READ latency (RL), row cycle time, and burst sequence length.
Balanced READ and WRITE latenci.

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Published: May 27, 2016 |