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IS41LV16100S 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

IS41LV16100S Description

IS41C16100S IS41LV16100S 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE .
The ICSI IS41C16100S and IS41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories.

IS41LV16100S Features

* Extended Data-Out (EDO) Page Mode access cycle
* TTL compatible inputs and outputs; tristate I/O
* Refresh Interval: Refresh Mode: 1,024 cycles /16 ms RAS-Only, CAS-before-RAS (CBR), and Hidden Self refresh Mode - 1,024 cycles / 128ms
* JEDEC standard pinout

IS41LV16100S Applications

* The IS41C16100S and IS41LV16100S are packaged in a 42-pin 400mil SOJ and 400mil 50- (44-) pin TSOP-2. EY TIMING PARAMETERS Parameter Max. RAS Access Time (tRAC) Max. CAS Access Time (tCAC) Max. Column Address Access Time (tAA) Min. EDO Page Mode Cycle Time (tPC) Min. Read/Write Cycle Time (tRC) -4

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Datasheet Details

Part number
IS41LV16100S
Manufacturer
Integrated Silicon Solution
File Size
569.28 KB
Datasheet
IS41LV16100S_IntegratedSiliconSolution.pdf
Description
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

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16-MBIT DYNAMIC RAM WITH EDO PAGE MODE Integrated Silicon Solution
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