Description
The ISSI IS61WV51216ALL/BLL and IS64WV51216BLL
are high-speed, 8M-bit static RAMs organized as 512K
words by 16 bits.It is fabricated using ISSI's high-perform-
ance CMOS technology.This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels.Easy memory expansion is provided by u
Features
- High-speed access times:
8, 10, 20 ns.
- High-performance, low-power CMOS process.
- Multiple center power and ground pins for greater
noise immunity.
- Easy memory expansion with CE and OE op-
tions.
- CE power-down.
- Fully static operation: no clock or refresh
required.
- TTL compatible inputs and outputs.
- Single power supply
VDD 1.65V to 2.2V (IS61WV51216ALL) speed = 20ns for VDD 1.65V to 2.2V VDD 2.4V to 3.6V (IS61/64WV51216BLL) s.
