IRF2807Z
International Rectifier
266.57kb
Automotive mosfet. Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve ext
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IRF2807 - Power MOSFET
(International Rectifier)
l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated
Description
Fifth Generat.
IRF2807 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤13mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche t.
IRF2807L - HEXFET Power MOSFET
(International Rectifier)
PD - 94170
Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalan.
IRF2807L - N-Channel MOSFET
(INCHANGE)
Isc N-Channel MOSFET Transistor
·FEATURES ·With To-262 package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche test.
IRF2807LPbF - HEXFET Power MOSFET
(International Rectifier)
Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Le.
IRF2807PbF - HEXFET Power MOSFET
(International Rectifier)
l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated .
IRF2807S - HEXFET Power MOSFET
(International Rectifier)
PD - 94170
Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalan.
IRF2807S - N-Channel MOSFET
(INCHANGE)
Isc N-Channel MOSFET Transistor
IRF2807S
·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·10.
IRF2807SPbF - HEXFET Power MOSFET
(International Rectifier)
Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Le.
IRF2807Z - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IRF2807Z, IIRF2807Z
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤8.4mΩ ·Enhancement mode ·Fast Switching S.