* n n n n n Repetitive Avalanche Ratings Dynamic dv/dt Rating Hermetically Sealed Simple Drive Requirements Ease of Paralleling Absolute Maximum Ratings Parameter ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C I DM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continu
IRF350
International Rectifier
144.84 KB
N-channel power mosfet.
PD - 90339F
REPETITIVE A V ALANCHE AND dv/dt RATED
HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)
Product Summary
Part Number IRF350 BVDSS 400V RDS(on) .
📁 Related Datasheet
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High Speed Switch
TO3 Type Package
D
Features: D Repetitive Avalanche Ratings D Dynamic dv/dt Rating D.
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Data Sheet March 1999 File Number 1826.3
15A, 400V, 0.300 Ohm, N-Channel Power MOSFET
This is an N-Channel enhancement mode silicon gate power.
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