IRF350 Datasheet - International Rectifier

IRF350 N-Channel Power MOSFET

PD - 90339F REPETITIVE A V ALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) Product Summary Part Number IRF350 BVDSS 400V RDS(on) 0.300Ω ID 14A  IRF350 JANTX2N6768 JANTXV2N6768 [REF:MIL-PRF-19500/543] 400V, N-CHANNEL The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transcondu.

IRF350 Features

* n n n n n Repetitive Avalanche Ratings Dynamic dv/dt Rating Hermetically Sealed Simple Drive Requirements Ease of Paralleling Absolute Maximum Ratings Parameter ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C I DM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continu

IRF350_InternationalRectifier.pdf