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IRF3610SPBF Datasheet - International Rectifier

IRF3610SPBF HEXFET Power MOSFET

IRF3610SPbF HEXFET® Power MOSFET D Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free G S VDSS RDS(on) typ. max. ID 100V 9.3mΩ 11.6mΩ 103A D S G D2Pak IRF3610SPbF G D S Gate Drain Source Abs.

IRF3610SPBF Features

* PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 13, 15).

IRF3610SPBF Datasheet (293.44 KB)