Datasheet Specifications
- Part number
- IRF3610SPBF
- Manufacturer
- International Rectifier
- File Size
- 293.44 KB
- Datasheet
- IRF3610SPBF-InternationalRectifier.pdf
- Description
- HEXFET Power MOSFET
Description
IRF3610SPbF HEXFET® Power MOSFET D Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power.
Features
* PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 13, 15).Applications
* l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dtIRF3610SPBF Distributors
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