IRF5M3415 Datasheet - International Rectifier

IRF5M3415 Power MOSFET

PD - 94286A HEXFET® POWER MOSFET THRU-HOLE (TO-254AA) IRF5M3415 150V, N-CHANNEL Product Summary Part Number IRF5M3415 BVDSS 150V RDS(on) 0.049Ω ID 35A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely.

IRF5M3415 Features

* n n n n n n n Low RDS(on) Avalanche Energy Ratings Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuo

IRF5M3415 Datasheet (113.19 KB)