IRF5M5210 Datasheet - International Rectifier

IRF5M5210 Power MOSFET

PD - 94247 HEXFET® POWER MOSFET THRU-HOLE (TO-254AA) IRF5M5210 100V, P-CHANNEL Product Summary Part Number IRF5M5210 BVDSS -100V RDS(on) 0.07Ω ID -34A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely.

IRF5M5210 Features

* n n n n n n n Low RDS(on) Avalanche Energy Ratings Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight Absolute Maximum Ratings Parameter ID @ VGS = -10V, TC = 25°C ID @ VGS = -10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Contin

IRF5M5210 Datasheet (113.72 KB)