IRF5M3710 Datasheet (International Rectifier)

IRF5M3710, 100V N-CHANNEL MOSFET

Fifth Generation HEXFET® power MOSFET technology is the key to IR Hirel utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area.

This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well kno

IRF5M3710 Features

* Low RDS(on)

* Avalanche Energy Ratings

* Dynamic dv/dt Rating

* Simple Drive Requirements

* Hermetically Sealed

* Light Weight TO-254AA Absolute Maximum Ratings Symbol Parameter ID1 @ VGS = 10V, TC = 25°C Continuous Drain Current ID2 @ VGS = 10V, TC = 100°C Continuous