IRF5Y1310CM Datasheet - International Rectifier

IRF5Y1310CM Power MOSFET

PD - 94058 HEXFET® POWER MOSFET THRU-HOLE (TO-257AA) IRF5Y1310CM 100V, N-CHANNEL Product Summary Part Number IRF5Y1310CM BVDSS 100V RDS(on) 0.044Ω ID 18A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an e.

IRF5Y1310CM Features

* n n n n n n n Low RDS(on) Avalanche Energy Ratings Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuo

IRF5Y1310CM Datasheet (107.01 KB)