IRF5Y5305CM Datasheet - International Rectifier

IRF5Y5305CM Power MOSFET

PD - 94028 HEXFET® POWER MOSFET THRU-HOLE (TO-257AA) IRF5Y5305CM 55V, P-CHANNEL Product Summary Part Number IRF5Y5305CM BVDSS -55V RDS(on) 0.065Ω ID -18A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an e.

IRF5Y5305CM Features

* n n n n n n n Low RDS(on) Avalanche Energy Ratings Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight Absolute Maximum Ratings Parameter ID @ VGS = -10V, TC = 25°C ID @ VGS = -10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Contin

IRF5Y5305CM Datasheet (108.34 KB)