IRF5Y3315CM Datasheet - International Rectifier

IRF5Y3315CM Power MOSFET

PD - 94268 HEXFET® POWER MOSFET THRU-HOLE (TO-257AA) IRF5Y3315CM 150V, N-CHANNEL Product Summary Part Number IRF5Y3315CM BVDSS 150V RDS(on) 0.085Ω ID 18A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an e.

IRF5Y3315CM Features

* n n n n n n n Low RDS(on) Avalanche Energy Ratings Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuo

IRF5Y3315CM Datasheet (106.55 KB)