IRF6612 Datasheet - International Rectifier

IRF6612 HEXFET Power MOSFET

The IRF6612 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET TM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used i.

IRF6612 Features

* ry dv/dt - -

* + RG

* dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test V DD VDD + - Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD

* VGS = 5V

IRF6612 Datasheet (200.07 KB)