IRF6612 HEXFET Power MOSFET

International Rectifier

Description

PD - 95842 IRF6612/IRF6612TR1 VDSS l HEXFET® Power MOSFET Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losse.
The IRF6612 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET TM packaging to achieve the lowest on-state resist.

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Datasheet Specifications

Part number: IRF6612
Manufacturer: International Rectifier
File Size: 200.07 KB
Datasheet: IRF6612_InternationalRectifier.pdf
Description: HEXFET Power MOSFET

Features

* ry dv/dt - -
* + RG
* dv/dt controlled by RG Driver same type as D. U. T. I SD controlled by Duty Factor "D" D. U. T. - Device Under Test V DD VDD + - Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD
* VGS = 5V

Applications

* PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best t

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IRF6612 HEXFET Power MOSFET International Rectifier

International Rectifier IRF6612-like datasheet