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IRF6691 HEXFET Power MOSFET

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Description

PD - 95867A HEXFET® Power MOSFET plus Schottky Diode Application Specific MOSFETs Integrates Monolithic Trench Schottky Diode l Ideal for CPU Core DC.
The IRF6691 combines IR’s industry leading DirectFET package technology with the latest monolithic die technology, which integrates MOSFET plus free-w.

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Datasheet Specifications

Part number
IRF6691
Manufacturer
International Rectifier
File Size
228.86 KB
Datasheet
IRF6691_InternationalRectifier.pdf
Description
HEXFET Power MOSFET

Features

* iode Forward Current di/dt D. U. T. VDS Waveform Diode Recovery dv/dt ‚ - -
* +  RG
* dv/dt controlled by RG Driver same type as D. U. T. I SD controlled by Duty Factor "D" D. U. T. - Device Under Test V DD VDD + - Re-Applied Voltage Inductor Curent

Applications

* PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best t

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