IRF6691 Datasheet - International Rectifier

IRF6691 HEXFET Power MOSFET

The IRF6691 combines IRs industry leading DirectFET package technology with the latest monolithic die technology, which integrates MOSFET plus free-wheeling Schottky diode. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vap.

PD - 95867A HEXFET® Power MOSFET plus Schottky Diode Application Specific MOSFETs Integrates Monolithic Trench Schottky Diode l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l Low Reverse Recovery Losses l Low Switching Losses l Low Reverse Recovery Charge and Low Vf l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques l l IRF6691 Qg(typ.) 47nC VDSS 20V RDS(on) max 2.5mΩ@VGS = 4.5V 1.8mΩ@VGS = 10V MT DirectFET ISOMETRIC.

IRF6691 Features

* iode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt - -

* + RG

* dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test V DD VDD + - Re-Applied Voltage Inductor Curent

IRF6691 Datasheet (228.86 KB)