Part number:
IRF6603
Manufacturer:
International Rectifier
File Size:
201.71 KB
Description:
Hexfetpower mosfet.
IRF6603_InternationalRectifier.pdf
Datasheet Details
The IRF6603 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile.
The DirectFET package is compatible with existing layout geometries used i
IRF6603 Features
* Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test VDD VDD + - Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD
* VGS = 5V for Logic Level Devices Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power M
IRF6603_InternationalRectifier.pdf
Datasheet Details
IRF6603
International Rectifier
201.71 KB
Hexfetpower mosfet.
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