IRF6603 - HEXFETPower MOSFET

International Rectifier

IRF6603 Datasheet Preview — Preview of IRF6603 PDF

Datasheet Details

Part number	IRF6603
Manufacturer	International Rectifier ↗
File Size	201.71 KB
Description	HEXFETPower MOSFET
Datasheet	IRF6603_InternationalRectifier.pdf

IRF6603 Product details

Description

The IRF6603 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile.

Features

Driver same type as D. U. T. ISD controlled by Duty Factor "D" D. U. T. - Device Under Test VDD VDD + - Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD.
VGS = 5V for Logic Level Devices Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs Id Vds Vgs Vgs(th) Qgs1 Qgs2 Qgd Qgodr Fig 16. Gate Charge Waveform www. irf. com 7 IRF6603 Power MOSFET Selection for Non-Isolated DC/DC Converters Control FET Special attention has bee.

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Published: Apr 16, 2005 |