IRF6603 Datasheet - International Rectifier

IRF6603, HEXFETPower MOSFET

PD - 94364E HEXFET® l IRF6603 Power MOSFET Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l High Cdv/dt.
The IRF6603 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resista.

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Datasheet Details

Part number:

IRF6603

Manufacturer:

International Rectifier

File Size:

201.71 KB

Description:

HEXFETPower MOSFET

Features

* Driver same type as D. U. T. ISD controlled by Duty Factor "D" D. U. T. - Device Under Test VDD VDD + - Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD
* VGS = 5V for Logic Level Devices Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power M

Applications

* PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and process. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best the

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IRF6603 HEXFETPower MOSFET International Rectifier

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