IRF6608 Datasheet - International Rectifier

IRF6608, lHEXFET Power MOSFET

PD - 94727B IRF6608 l l l l l l l Application Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses Low Pr.
The IRF6608 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resista.

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IRF6608_InternationalRectifier.pdf

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Datasheet Details

Part number:

IRF6608

Manufacturer:

International Rectifier

File Size:

178.75 KB

Description:

lHEXFET Power MOSFET

Features

* ng Time Waveforms Id Vds Vgs 50KΩ 12V .2µF .3µF D. U. T. VGS 3mA + V - DS Vgs(th) IG ID Current Sampling Resistors Qgs1 Qgs2 Qgd Qgodr Fig 15. Gate Charge Test Circuit Fig 16. Gate Charge Waveform www. irf. com 5 IRF6608 D. U. T Driver Gate Drive + P. W. Period D= P. W. Period VGS=10V

Applications

* PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best t

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IRF6608 lHEXFET Power MOSFET International Rectifier

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