IRF6608 lHEXFET Power MOSFET

International Rectifier

Description

PD - 94727B IRF6608 l l l l l l l Application Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses Low Pr.
The IRF6608 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resista.

📥 Download Datasheet

IRF6608 Datasheet Preview — Preview of IRF6608 PDF

Datasheet Specifications

Part number: IRF6608
Manufacturer: International Rectifier
File Size: 178.75 KB
Datasheet: IRF6608_InternationalRectifier.pdf
Description: lHEXFET Power MOSFET

Features

* ng Time Waveforms Id Vds Vgs 50KΩ 12V .2µF .3µF D. U. T. VGS 3mA + V - DS Vgs(th) IG ID Current Sampling Resistors Qgs1 Qgs2 Qgd Qgodr Fig 15. Gate Charge Test Circuit Fig 16. Gate Charge Waveform www. irf. com 5 IRF6608 D. U. T Driver Gate Drive + P. W. Period D= P. W. Period VGS=10V

Applications

* PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best t

IRF6608 Distributors

📁 Related Datasheet

IRF6643TRPbF IRF6644PbF IRF6648PbF IRF6648TRPbF IRF6662PbF IRF6662TRPbF

📌 All Tags

IRF6608 lHEXFET Power MOSFET International Rectifier

International Rectifier IRF6608-like datasheet