IRF6608 Datasheet - International Rectifier

IRF6608 lHEXFET Power MOSFET

The IRF6608 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used.

IRF6608 Features

* ng Time Waveforms Id Vds Vgs 50KΩ 12V .2µF .3µF D.U.T. VGS 3mA + V - DS Vgs(th) IG ID Current Sampling Resistors Qgs1 Qgs2 Qgd Qgodr Fig 15. Gate Charge Test Circuit Fig 16. Gate Charge Waveform www.irf.com 5 IRF6608 D.U.T Driver Gate Drive + P.W. Period D= P.W. Period VGS=10V

IRF6608_InternationalRectifier.pdf