IRF6608 Datasheet - International Rectifier

lHEXFET Power MOSFET

IRF6608 Features

* ng Time Waveforms Id Vds Vgs 50KΩ 12V .2µF .3µF D.U.T. VGS 3mA + V - DS Vgs(th) IG ID Current Sampling Resistors Qgs1 Qgs2 Qgd Qgodr Fig 15. Gate Charge Test Circuit Fig 16. Gate Charge Waveform www.irf.com 5 IRF6608 D.U.T Driver Gate Drive + P.W. Period D= P.W. Period VGS=10V

IRF6608 General Description

The IRF6608 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used.

IRF6608 Datasheet (178.75 KB)

IRF6608 Datasheet Preview — Preview of IRF6608 PDF

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Part number:

IRF6608

Manufacturer:

International Rectifier

File Size:

178.75 KB

Description:

Lhexfet power mosfet.
PD - 94727B IRF6608 l l l l l l l Application Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses Low Pr.

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IRF6608 lHEXFET Power MOSFET International Rectifier

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IRF6608 Features

IRF6608 General Description

Datasheet Details

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