IRF6609 Power MOSFET

International Rectifier

Description

PD - 95822A HEXFET® Power MOSFET Low Conduction Losses l Low Switching Losses l Ideal Synchronous Rectifier MOSFET l Low Profile (<0.7 mm) l Dual Sid.
The IRF6609 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resista.

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IRF6609 Datasheet Preview — Preview of IRF6609 PDF

Datasheet Specifications

Part number: IRF6609
Manufacturer: International Rectifier
File Size: 230.63 KB
Datasheet: IRF6609_InternationalRectifier.pdf
Description: Power MOSFET

Features

* ice Under Test V DD VDD + - Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD
* VGS = 5V for Logic Level Devices Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs Current Regulator Same Type as D. U. T. Id Vds Vgs 50KΩ 12V .2µF

Applications

* PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best t

IRF6609 Distributors

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IRF6609 Power MOSFET International Rectifier

International Rectifier IRF6609-like datasheet