IRF6609 Datasheet - International Rectifier

Power MOSFET

IRF6609 Features

* ice Under Test V DD VDD + - Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD

* VGS = 5V for Logic Level Devices Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs Current Regulator Same Type as D.U.T. Id Vds Vgs 50KΩ 12V .2µF

IRF6609 General Description

The IRF6609 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used i.

IRF6609 Datasheet (230.63 KB)

IRF6609 Datasheet Preview — Preview of IRF6609 PDF

Datasheet Details

Part number:

IRF6609

Manufacturer:

International Rectifier

File Size:

230.63 KB

Description:

Power mosfet.
PD - 95822A HEXFET® Power MOSFET Low Conduction Losses l Low Switching Losses l Ideal Synchronous Rectifier MOSFET l Low Profile (<0.7 mm) l Dual Sid.

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IRF6609 Power MOSFET International Rectifier

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IRF6609 Features

IRF6609 General Description

Datasheet Details

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