Part number:
IRF6609
Manufacturer:
International Rectifier
File Size:
230.63 KB
Description:
Power mosfet.
IRF6609_InternationalRectifier.pdf
Datasheet Details
The IRF6609 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile.
The DirectFET package is compatible with existing layout geometries used i
IRF6609 Features
* ice Under Test V DD VDD + - Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD
* VGS = 5V for Logic Level Devices Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs Current Regulator Same Type as D.U.T. Id Vds Vgs 50KΩ 12V .2µF
IRF6609_InternationalRectifier.pdf
Datasheet Details
IRF6609
International Rectifier
230.63 KB
Power mosfet.
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