IRF6609 Datasheet - International Rectifier

IRF6609, Power MOSFET

PD - 95822A HEXFET® Power MOSFET Low Conduction Losses l Low Switching Losses l Ideal Synchronous Rectifier MOSFET l Low Profile (<0.7 mm) l Dual Sid.
The IRF6609 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resista.

datasheet Preview Page 1 from Datasheet4u.com

IRF6609_InternationalRectifier.pdf

IRF6609 Datasheet Preview — Preview of IRF6609 PDF

Datasheet Details

Part number:

IRF6609

Manufacturer:

International Rectifier

File Size:

230.63 KB

Description:

Power MOSFET

Features

* ice Under Test V DD VDD + - Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD
* VGS = 5V for Logic Level Devices Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs Current Regulator Same Type as D. U. T. Id Vds Vgs 50KΩ 12V .2µF

Applications

* PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best t

IRF6609 Distributors

📁 Related Datasheet

IRF6643TRPbF IRF6644PbF IRF6648PbF IRF6648TRPbF IRF6662PbF IRF6662TRPbF

📌 All Tags

IRF6609 Power MOSFET International Rectifier

International Rectifier IRF6609-like datasheet