IRF6609TRPBF - Power MOSFET
The IRF6609PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile.
The DirectFET package is compatible with existing layout geometries use
l l l l l l l l l RoHS Compliant Lead-Free (Qualified up to 260°C Reflow) Application Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses and Switching Losses High Cdv/dt Immunity Low Profile (<0.7mm) Dual Sided Cooling Compatible Compatible with existing Surface Mount Techniques DirectFET Power MOSFET IRF6609PbF IRF6609TRPbF Qg 46nC PD - 97091A VDSS 20V 2.0mΩ@VGS = 10V 2.6mΩ@VGS = 4.5V RDS(on) max Applicable DirectFET Outline and Substrate Outline (see p.
IRF6609TRPBF Features
* ery part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 16a, 16b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage i
