Part number:
IRF6607
Manufacturer:
International Rectifier
File Size:
201.63 KB
Description:
Power mosfet.
IRF6607_InternationalRectifier.pdf
Datasheet Details
The IRF6607 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile.
The DirectFET package is compatible with existing layout geometries used i
IRF6607 Features
* trolled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test VDD VDD + - Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD
* VGS = 5V for Logic Level Devices Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel HE
IRF6607_InternationalRectifier.pdf
Datasheet Details
IRF6607
International Rectifier
201.63 KB
Power mosfet.
📁 Related Datasheet
📌 All Tags