IRF6607 Datasheet - International Rectifier

Power MOSFET

IRF6607 Features

* trolled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test VDD VDD + - Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD

* VGS = 5V for Logic Level Devices Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel HE

IRF6607 General Description

The IRF6607 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used i.

IRF6607 Datasheet (201.63 KB)

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Part number:

IRF6607

Manufacturer:

International Rectifier

File Size:

201.63 KB

Description:

Power mosfet.
PD - 94574B HEXFET® l l IRF6607 Power MOSFET Application Specific MOSFETs Ideal for CPU Core DC-DC Converters l Low Conduction Losses l High Cdv/dt.

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IRF6607 Power MOSFET International Rectifier

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IRF6607 Features

IRF6607 General Description

Datasheet Details

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