IRF6607TR1 Power MOSFET

International Rectifier

Description

PD - 94574B HEXFET® l l IRF6607 Power MOSFET Application Specific MOSFETs Ideal for CPU Core DC-DC Converters l Low Conduction Losses l High Cdv/dt.
The IRF6607 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resista.

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Datasheet Specifications

Part number: IRF6607TR1
Manufacturer: International Rectifier
File Size: 201.63 KB
Datasheet: IRF6607TR1_InternationalRectifier.pdf
Description: Power MOSFET

Features

* trolled by RG Driver same type as D. U. T. ISD controlled by Duty Factor "D" D. U. T. - Device Under Test VDD VDD + - Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD
* VGS = 5V for Logic Level Devices Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel HE

Applications

* PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and process. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best the

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IRF6607TR1 Power MOSFET International Rectifier

International Rectifier IRF6607TR1-like datasheet