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IRF6691TRPBF

Power MOSFET

IRF6691TRPBF Features

* , Reverse Drain Current (A) 100 100µsec 10 T A = 25°C Tj = 150°C Single Pulse 1 0 1 10 1msec 1 0.0 0.2 0.4 0.6 0.8 VGS = 0V 1.0 1.2 10msec 100 VSD, Source-to-Drain Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 9. Typical Source-Drain Diode Forward Voltage 200 Fig10. Maximum Safe Opera

IRF6691TRPBF General Description

The IRF6691PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used.

IRF6691TRPBF Datasheet (660.69 KB)

Preview of IRF6691TRPBF PDF

Datasheet Details

Part number:

IRF6691TRPBF

Manufacturer:

International Rectifier

File Size:

660.69 KB

Description:

Power mosfet.
PD - 97204 PROVISIONAL l l l l l l l l l RoHs Compliant  Lead-Free (Qualified up to 260°C Reflow) Application Specific MOSFETs Ideal for CPU Core D.

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IRF6691TRPBF Power MOSFET International Rectifier

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