IRF7307QPBF Datasheet, Mosfet, International Rectifier

IRF7307QPBF Features

• Mosfet of these HEXFET Power MOSFET's are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design

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IRF7307QPBF

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International Rectifier

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📄 Datasheet

Description:

Power mosfet. Top View RDS(on) 0.050Ω 0.090Ω These HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to

IRF7307QPBF Application

• Applications The efficient SO-8 package provides enhanced thermal characteristics and dual MOSFET die capability making it ideal in a variety of

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IRF7307QPBF

International Rectifier

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