* of these HEXFET Power MOSFET's are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. The efficient SO-8 package
IRF7307QPBF Datasheet (297.30 KB)
IRF7307QPBF
International Rectifier
297.30 KB
Power mosfet.
IRF7307QPbF
l Advanced Process Technology
HEXFET® Power MOSFET
l Ultra Low On-Resistance l Dual N and P Channel MOSFET
N-CHANNEL MOSFET
S1 1
8 D.
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