* of these HEXFET Power MOSFET's are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. The efficient SO-8 package provide
IRF7343QPbF Datasheet (218.05 KB)
IRF7343QPbF
International Rectifier
218.05 KB
Power mosfet.
PD - 96110A
l Advanced Process Technology l Ultra Low On-Resistance l Dual N and P Channel MOSFET l Surface Mount l Available in Tape & Reel l 150°C .
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