IRF7343QPbF Power MOSFET

International Rectifier

Description

PD - 96110A l Advanced Process Technology l Ultra Low On-Resistance l Dual N and P Channel MOSFET l Surface Mount l Available in Tape & Reel l 150°C .
These HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area.

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Datasheet Specifications

Part number: IRF7343QPbF
Manufacturer: International Rectifier
File Size: 218.05 KB
Datasheet: IRF7343QPbF-InternationalRectifier.pdf
Description: Power MOSFET

Applications

* The efficient SO-8 package provides enhanced thermal characteristics and dual MOSFET die capability making it ideal in a variety of power applications. This dual, surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel. IRF7343QPBF HEXFET® Power MOSFET N-CHANNE

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IRF7343QPbF Power MOSFET International Rectifier

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