IRF7343

HEXFET Power MOSFET

International Rectifier

IRF7343 Features

* 480 8 Coss 240 4 Crss 0 1 10 100 0 0 10 20 30 40

* VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 20. Typical Capacitance Vs. Drain-to-Source Voltage Fig 21. Typical Gate Charge Vs. Gate-to-Source Voltage 100 Thermal Response (Z thJA ) D = 0.50 0.20 10 0.10 0.05

IRF7343 General Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer .

IRF7343 Datasheet (143.71 KB)

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IRF7343

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International Rectifier

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143.71 KB

Description:

Hexfet power mosfet.
PD -91709 IRF7343 HEXFET® Power MOSFET l l l l l Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Ava.

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IRF7343 HEXFET Power MOSFET International Rectifier

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IRF7343 Features

IRF7343 General Description

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