IRF7343 HEXFET Power MOSFET

International Rectifier

Description

PD -91709 IRF7343 HEXFET® Power MOSFET l l l l l Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Ava.
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

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Datasheet Specifications

Part number: IRF7343
Manufacturer: International Rectifier
File Size: 143.71 KB
Datasheet: IRF7343_InternationalRectifier.pdf
Description: HEXFET Power MOSFET

Features

* 480 8 Coss 240 4 Crss 0 1 10 100 0 0 10 20 30 40
* VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 20. Typical Capacitance Vs. Drain-to-Source Voltage Fig 21. Typical Gate Charge Vs. Gate-to-Source Voltage 100 Thermal Response (Z thJA ) D = 0.50 0.20 10 0.10 0.05

Applications

* The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package i

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IRF7343 HEXFET Power MOSFET International Rectifier

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