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IRF7494 HEXFET Power MOSFET

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Description

FOR REVIEW ONLY PD -94641 PD TBD IRF7494 HEXFET® Power MOSFET l Applications High frequency DC-DC converters VDSS 150V 44m:@VGS = 10V RDS(on) ma.

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Datasheet Specifications

Part number
IRF7494
Manufacturer
International Rectifier
File Size
567.58 KB
Datasheet
IRF7494_InternationalRectifier.pdf
Description
HEXFET Power MOSFET

Features

* TJ = 25°C, L = 77mH RG = 25Ω, IAS = 3.1A.
* When mounted on 1 inch square copper board, t ≤ 10 sec.
* Pulse width ≤ 400µs; duty cycle ≤ 2%. … Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . † ISD ≤ 3.1A, di/dt ≤ 270A/µ

Applications

* High frequency DC-DC converters VDSS 150V 44m:@VGS = 10V RDS(on) max ID 5.2A Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current

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