IRF7494 Datasheet (International Rectifier)

IRF7494, HEXFET Power MOSFET

FOR REVIEW ONLY PD -94641 PD TBD IRF7494 HEXFET® Power MOSFET l Applications High frequency DC-DC converters VDSS 150V 44m:@VGS = 10V RDS(on) max ID 5.2A Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App.

Note AN1001) l Fully Characterized Avalanche Voltage and Current S S S G 1 8 A A D D D D 2 7 3 6 4 5 Top View SO-8 Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25°C

IRF7494 Features

* TJ = 25°C, L = 77mH RG = 25Ω, IAS = 3.1A.

* When mounted on 1 inch square copper board, t ≤ 10 sec.

* Pulse width ≤ 400µs; duty cycle ≤ 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . ISD ≤ 3.1A, di/dt ≤ 270A/µ