* TJ = 25°C, L = 77mH RG = 25Ω, IAS = 3.1A.
* When mounted on 1 inch square copper board, t ≤ 10 sec.
* Pulse width ≤ 400µs; duty cycle ≤ 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . ISD ≤ 3.1A, di/dt ≤ 270A/µ
IRF7494
International Rectifier
567.58 KB
Hexfet power mosfet.
FOR REVIEW ONLY
PD -94641 PD TBD
IRF7494
HEXFET® Power MOSFET
l
Applications High frequency DC-DC converters
VDSS
150V
44m:@VGS = 10V
RDS(on) ma.
📁 Related Datasheet
IRF7490 HEXFET Power MOSFET (International Rectifier)
IRF7490PBF HEXFET Power MOSFET (International Rectifier)
IRF7492 HEXFET Power MOSFET (International Rectifier)
IRF7492PBF HEXFET Power MOSFET (International Rectifier)
IRF7493 HEXFET Power MOSFET (International Rectifier)
IRF7493PBF Power MOSFET (International Rectifier)
IRF7493PBF-1 Power MOSFET (International Rectifier)
IRF7494PbF Power MOSFET (International Rectifier)
IRF7495 Power MOSFET (International Rectifier)
IRF7495PBF Power MOSFET (International Rectifier)
