IRF7494PbF Datasheet - International Rectifier

IRF7494PbF Power MOSFET

Applications l High frequency DC-DC converters l Lead-Free PD - 95349C IRF7494PbF VDSS 150V HEXFET® Power MOSFET RDS(on) max ID 44mΩ@VGS = 10V 5.1A Benefits l Low Gate to Drain Charge to Reduce Switching Losses S l Fully Characterized Capacitance Including S Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage S G and Current 18 27 36 45 Top View AA D D D D SO-8 Absolute Maximum Ratings Parameter VDS Drain-to-Source Voltage VGS Gate.

IRF7494PbF Features

* ure. Starting TJ = 25°C, L = 55mH, RG = 25Ω, IAS = 3.1A.

* When mounted on 1 inch square copper board, t ≤ 10 sec.

* Pulse width ≤ 400µs; duty cycle ≤ 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. ISD ≤ 3.1A,

IRF7494PbF Datasheet (220.57 KB)