IRF7495PBF Datasheet - International Rectifier

IRF7495PBF Power MOSFET

Applications l High frequency DC-DC converters l Lead-Free PD - 95288 IRF7495PbF VDSS 100V HEXFET® Power MOSFET RDS(on) max ID :22m @VGS = 10V 7.3A Benefits l Low Gate to Drain Charge to Reduce Switching Losses S l Fully Characterized Capacitance Including S Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage S G and Current 18 27 36 45 Top View AA D D D D SO-8 Absolute Maximum Ratings Parameter VDS Drain-to-Source Voltage VGS Gat.

IRF7495PBF Features

* DD ≤ V(BR)DSS, TJ ≤ 150°C. Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252

IRF7495PBF Datasheet (143.53 KB)