IRF7799L2PBF Datasheet - International Rectifier

IRF7799L2PBF Power MOSFET

The IRF7799L2TR/TR1PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has a footprint smaller than a D2PAK and only 0.7 mm profile. The DirectFET package is compatible with existing layou.

IRF7799L2PbF l RoHS Compliant, Halogen Free l Lead-Free (Qualified up to 260°C Reflow) l Ideal for High Performance Isolated Converter Primary Switch Socket l Optimized for Synchronous Rectification l Low Conduction Losses l High Cdv/dt Immunity l Low Profile (<0.7mm) l Dual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques l Industrial Qualified Applicable DirectFET Outline and Substrate Outline DirectFET Power MOSFET Typical values (unless otherwise speci.

IRF7799L2PBF Features

* Source Voltage 4 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback February 24, 2014 IRF7799L2PbF ISD, Reverse Drain Current (A) 1000 100 10 TJ = 175°C TJ = 25°C TJ = -40°C 1 VGS = 0V 0.1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 VSD, Source-to-Drain Voltage (V) Fig 10. Typ

IRF7799L2PBF Datasheet (281.78 KB)