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IRF7799L2TRPBF

Power MOSFET

IRF7799L2TRPBF Features

* = 175°C Single Pulse 10msec 0.1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 VSD, Source-to-Drain Voltage (V) 1 0.1 1 10 100 1000 VDS, Drain-to-Source Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage 40 VGS(th) , Gate Threshold Voltage (V) Fig11. Maximum Safe Operating Area 6.0 ID, Drain

IRF7799L2TRPBF General Description

The IRF7799L2TR/TR1PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has a footprint smaller than a D2PAK and only 0.7 mm profile. The DirectFET package is compatible with existing layou.

IRF7799L2TRPBF Datasheet (328.57 KB)

Preview of IRF7799L2TRPBF PDF

Datasheet Details

Part number:

IRF7799L2TRPBF

Manufacturer:

International Rectifier

File Size:

328.57 KB

Description:

Power mosfet.
PD - 96266 IRF7799L2TRPbF IRF7799L2TR1PbF RoHS Compliant, Halogen Free  l Lead-Free (Qualified up to 260°C Reflow) l Ideal for High Performance Isol.

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IRF7799L2TRPBF Power MOSFET International Rectifier

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