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IRF7799L2TR1PBF, IRF7799L2TRPBF Datasheet - International Rectifier

IRF7799L2TR1PBF Power MOSFET

The IRF7799L2TR/TR1PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has a footprint smaller than a D2PAK and only 0.7 mm profile. The DirectFET package is compatible with existing layou.
PD - 96266 IRF7799L2TRPbF IRF7799L2TR1PbF RoHS Compliant, Halogen Free  l Lead-Free (Qualified up to 260°C Reflow) l Ideal for High Performance Isolated Converter Primary Switch Socket l Optimized for Synchronous Rectification l Low Conduction Losses l High Cdv/dt Immunity l Low Profile (<0.7mm) l Dual Sided Cooling Compatible  l Compatible with existing Surface Mount Techniques  l Industrial Qualified l Typical values (unless otherwise specified) DirectFET™ Power MOSFET ‚ VDSS Qg tot VGS.

IRF7799L2TR1PBF Features

* = 175°C Single Pulse 10msec 0.1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 VSD, Source-to-Drain Voltage (V) 1 0.1 1 10 100 1000 VDS, Drain-to-Source Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage 40 VGS(th) , Gate Threshold Voltage (V) Fig11. Maximum Safe Operating Area 6.0 ID, Drain

IRF7799L2TRPBF_InternationalRectifier.pdf

This datasheet PDF includes multiple part numbers: IRF7799L2TR1PBF, IRF7799L2TRPBF. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

IRF7799L2TR1PBF, IRF7799L2TRPBF

Manufacturer:

International Rectifier

File Size:

328.57 KB

Description:

Power mosfet.

Note:

This datasheet PDF includes multiple part numbers: IRF7799L2TR1PBF, IRF7799L2TRPBF.
Please refer to the document for exact specifications by model.

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IRF7799L2TR1PBF IRF7799L2TRPBF Power MOSFET International Rectifier

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