Description
The IRF7799L2TR/TR1PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has a footprint smaller than a D2PAK and only 0.7 mm profile.
Features
- = 175°C Single Pulse
10msec
0.1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 VSD, Source-to-Drain Voltage (V) 1
0.1 1 10 100 1000 VDS, Drain-to-Source Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
40
VGS(th) , Gate Threshold Voltage (V)
Fig11. Maximum Safe Operating Area
6.0
ID, Drain Current (A)
30
5.0
4.0
20
3.0 ID = 250µA 2.0 ID = 1.0mA ID = 1.0A
10
0 25 50 75 100 125 150 175 T C , Case Temperature (°C)
1.0 -75 -50 -25 0 25 50 75 100 125 150 175 T J , Temperature ( °C ).