IRF7807VPBF Datasheet, Mosfet, International Rectifier

IRF7807VPBF Features

• Mosfet DM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.001 0.01 0.1 1 10 10 1 0.0001 t1 , Rectangular Pulse Duration (sec) Figure 9. Maximum Effective Trans

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IRF7807VPBF

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International Rectifier

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📄 Datasheet

Description:

Power mosfet. This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge.

IRF7807VPBF Application

• Applications This has been demonstrated with the 3.3V and 5V converters. (Fig 3 and Fig 4). In these applications the same MOSFET IRF7807V was used

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IRF7807VPBF

International Rectifier

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