IRF7805PBF Datasheet - Infineon

IRF7805PBF Power MOSFET

This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make this device ideal for high efficiency DC-DC Converters that power the latest generation of mobile microprocessors. Th.

IRF7805PBF Features

* VDSS RDS(on) Qg QSW QOSS IRF7805PbF 30V 11m 31nC 11.5nC 36nC G Gate D Drain S Source Base part number Package Type IRF7805PbF SO-8 Standard Pack Form Quantity Tape and Reel 4000 Orderable Part Number IRF7805PbF Symbol VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA =

IRF7805PBF-Infineon.pdf