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IRF7805

N-Channel Power MOSFET

IRF7805 Features

* IRF7805 IRF7805A Vds 30V 30V Rds(on) 11mΩ 11mΩ Qg 31nC 31nC Qsw 11.5nC Qoss 36nC 36nC Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain or Source Current (VGS ≥ 4.5V) Pulsed Drain Current Power Dissipation 25°C 70°C Junction & Storage Temperature Range Co

IRF7805 General Description

These new devices employ advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make them ideal for high efficiency DC-DC Converters that power the latest generation of mobile microprocessors. The IRF7.

IRF7805 Datasheet (194.08 KB)

Preview of IRF7805 PDF

Datasheet Details

Part number:

IRF7805

Manufacturer:

International Rectifier

File Size:

194.08 KB

Description:

N-channel power mosfet.
PD

* 91746C IRF7805/IRF7805A HEXFET® Chip-Set for DC-DC Converters

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* N Channel Application Specific MOS.

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IRF7805 N-Channel Power MOSFET International Rectifier

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